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this is information on a product in full production. september 2013 doc id 15626 rev. 5 1/22 1 vnn3nv04p-e VNS3NV04P-E omnifet ii fully autoprotected power mosfet datasheet ? production data features linear current limitation thermal shutdown short circuit protection integrated clamp low current drawn from input pin diagnostic feedback through input pin esd protection direct access to the gate of the power mosfet (analog driving) compatible with standard power mosfet in compliance with the 2002/95/ec european directive description the vnn3nv04p-e, VNS3NV04P-E, are monolithic devices designed in stmicroelectronics ? vipower ? m0-3 technology, intended for replacement of standard power mosfets from dc up to 50 khz applications. built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. fault feedback can be detected by monitoring the voltage at the input pin. type r ds(on) i lim v clamp vnn3nv04p-e VNS3NV04P-E 120 m 3.5 a 40 v table 1. device summary package order codes tube tape and reel sot-223 ? vnn3nv04ptr-e so-8 VNS3NV04P-E vns3nv04ptr-e sot-223 so-8 1 2 2 3 www.st.com
contents vnn3nv04p-e, VNS3NV04P-E 2/22 doc id 15626 rev. 5 contents 1 block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.1 electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.1 sot-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2 so-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.3 sot-223 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.4 so-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
vnn3nv04p-e, VNS3NV04P-E list of tables doc id 15626 rev. 5 3/22 list of tables table 1. device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table 2. absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 table 3. thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 table 4. electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 table 5. sot-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 table 6. so-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 table 7. document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
list of figures vnn3nv04p-e, VNS3NV04P-E 4/22 doc id 15626 rev. 5 list of figures figure 1. block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 figure 2. configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 figure 3. current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 figure 4. switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 5. test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 6. unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 7. input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 8. unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 9. thermal impedance for sot-223 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 figure 10. derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 11. transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 12. static drain-source on resistance vs input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 12 figure 13. static drain-source on resistance vs input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 12 figure 14. source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 15. static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 16. turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 17. turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 18. transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 19. static drain-source on resistance vs id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 20. input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 21. turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 figure 22. turn-off drain source voltage slope (part 2/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 figure 23. capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 24. output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 25. normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 26. switching time resistive load (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 27. switching time resistive load (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 28. normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 29. normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 30. step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 31. sot-223 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 32. so-8 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 33. sot-223 tape and reel shipment (suffix ?tr?) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 34. so-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 35. so-8 tape and reel shipment (suffix ?tr?) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 0
vnn3nv04p-e, VNS3NV04P-E block diagram and pin description doc id 15626 rev. 5 5/22 1 block diagram and pin description figure 1. block diagram figure 2. configuration diagram (top view) 1. for the pins configuration related to sot-223 see outlines at page 1. overvoltage gate linear drain source clamp 1 2 3 current limiter control over temperature input fc01000 so-8 package (1) drain drain drain drain input source source source 1 4 5 8
electrical specifications vnn3nv04p-e, VNS3NV04P-E 6/22 doc id 15626 rev. 5 2 electrical specifications figure 3. current and voltage conventions 2.1 absolute maximum ratings drain input source i d i in v in v ds r in table 2. absolute maximum ratings symbol parameter value unit sot-223 so-8 v ds drain-source voltage (v in = 0 v) internally clamped v v in input voltage internally clamped v i in input current +/-20 ma r in min minimum input series impedance 220 i d drain current internally limited a i r reverse dc output current -5.5 a v esd1 electrostatic discharge (r = 1.5 k , c = 100 pf) 4000 v v esd2 electrostatic discharge on output pin only (r = 330 , c = 150 pf) 16500 v p tot total dissipation at t c =25c 7 8.3 w t j operating junction temperature internally limited c t c case operating temperature internally limited c t stg storage temperature -55 to 150 c
vnn3nv04p-e, VNS3NV04P-E electrical specifications doc id 15626 rev. 5 7/22 2.2 thermal data 2.3 electrical characteristics -40c < t j < 150c, unless otherwise specified. table 3. thermal data symbol parameter value unit sot-223 so-8 r thj-case thermal resistance junction-case max 18 c/w r thj-lead thermal resistance junction-lead max 15 c/w r thj-amb thermal resistance junction-ambient max 70 (1) 1. when mounted on a standard single-sided fr4 board with 50 mm 2 of cu (at least 35 mm thick) connected to all drain pins. 65 (1) c/w table 4. electrical characteristics symbol parameter test conditions min typ max unit off v clamp drain-source clamp voltage v in =0v; i d = 1.5 a 40 45 55 v v clth drain-source clamp threshold voltage v in =0v; i d =2ma 36 v v inth input threshold voltage v ds =v in ; i d =1ma 0.5 2.5 v i iss supply current from input pin v ds =0v; v in = 5 v 100 150 a v incl input-source clamp voltage i in =1ma 6 6.8 8 v i in = -1 ma -1.0 -0.3 v i dss zero input voltage drain current (v in =0v) v ds =13v; v in =0v; t j =25c 30 a v ds =25v; v in =0v 75 a on r ds(on) static drain-source on resistance v in =5v; i d = 1.5 a; t j = 25c 120 m v in =5v; i d = 1.5 a 240 m dynamic (t j =25 c, unless otherwise specified) g fs (1) forward transconductance v dd =13v; i d =1.5a 5.0 s c oss output capacitance v ds =13v; f=1mhz; v in = 0 v 150 pf switching (t j = 25c, unless otherwise specified) t d(on) turn-on delay time v dd =15v; i d = 1.5 a; v gen =5v; r gen =r in min =220 (see figure 4 ) 90 300 ns t r rise time 250 750 ns t d(off) turn-off delay time 450 1350 ns t f fall time 250 750 ns
electrical specifications vnn3nv04p-e, VNS3NV04P-E 8/22 doc id 15626 rev. 5 t d(on) turn-on delay time v dd =15v; i d = 1.5 a; v gen =5v; r gen =2.2k (see figure 4 ) 0.45 1.35 s t r rise time 2.5 7.5 s t d(off) turn-off delay time 3.3 10.0 s t f fall time 2.0 6.0 s (di/dt) on turn-on current slope v dd =15v; i d = 1.5 a; v gen =5v; r gen =r in min =220 4.7 a/s q i total input charge v dd =12v; i d = 1.5 a; v in =5v; i gen =2.13ma (see figure 7 ) 8.5 nc source drain diode (t j =25c, unless otherwise specified) v sd (1) forward on voltage i sd = 1.5 a; v in =0v 0.8 v t rr reverse recovery time i sd = 1.5 a; di/dt = 12 a/s; v dd =30v; l=200h (see figure 5 ) 107 ns q rr reverse recovery charge 37 c i rrm reverse recovery current 0.7 a protections (-40c < t j < 150c, unless otherwise specified) i lim drain current limit v in =5v; v ds =13v 3.5 5 7 a t dlim step response current limit v in =5v; v ds =13v 10 s t jsh over temperature shutdown 150 175 200 c t jrs over temperature reset 135 c i gf fault sink current v in =5v; v ds =13v; t j =t jsh 10 15 20 ma e as single pulse avalanche energy starting t j =25c; v dd =24v; v in =5v; r gen =r in min = 220 ; l = 24 mh (see figure 6 and figure 8 ) 100 mj 1. pulsed: pulse duration = 300 s, duty cycle 1.5 % table 4. electrical characteristics (continued) symbol parameter test conditions min typ max unit
vnn3nv04p-e, VNS3NV04P-E protection features doc id 15626 rev. 5 9/22 3 protection features during normal operation, the input pin is electrically connected to the gate of the internal power mosfet through a low impedance path. the device then behaves like a standard power mosfet and can be used as a switch from dc up to 50 khz. the only difference from the user?s standpoint is that a small dc current i iss (typ. 100 a) flows into the input pin in order to supply the internal circuitry. the device integrates: overvoltage clamp protection: internally set at 45 v, along with the rugged avalanche characteristics of the power mosfet stage give this device unrivalled ruggedness and energy handling capability. this feature is mainly important when driving inductive loads. linear current limiter circuit: limits the drain current i d to i lim whatever the input pin voltages. when the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the over temperature threshold t jsh . overtemperature and short circuit protection: these are based on sensing the chip temperature and are not dependent on the input voltage. the location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. overtemperature cutout occurs in the range 150c to 190c, a typical value being 170c. the device is automatically restarted when the chip temperature falls of about 15c below shutdown temperature. status feedback: in the case of an overtemperature fault condition (t j > t jsh ), the device tries to sink a diagnostic current i gf through the input pin in order to indicate fault condition. if driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. if the drive impedance is high enough so that the input pin driver is not able to supply the current i gf , the input pin will fall to 0 v. this will not however affect the device operation: no requirement is put on the current capability of the input pin driver except to be able to supply the normal operation drive current i iss . additional features of this device are esd protection according to the human body model and the ability to be driven from a ttl logic circuit.
protection features vnn3nv04p-e, VNS3NV04P-E 10/22 doc id 15626 rev. 5 figure 4. switching time test circuit for resistive load figure 5. test circuit for diode recovery times r gen v gen v d t i d 90% 10% t v gen t d(on) t d(off) t f t r l=100uh a b 8.5 v dd r gen fast diode omnifet a d i s 220 b omnifet d s i v gen
vnn3nv04p-e, VNS3NV04P-E protection features doc id 15626 rev. 5 11/22 figure 6. unclamped inductive load test circuits figure 7. input charge test circuit figure 8. unclamped inductive waveforms gen nd8003 v in
protection features vnn3nv04p-e, VNS3NV04P-E 12/22 doc id 15626 rev. 5 3.1 electrical characteristics curves figure 9. thermal impedance for sot-223 figure 10. derating curve figure 11. transconductance figure 12. static drain-source on resistance vs input voltage (part 1/2) figure 13. static drain-source on resistance vs input voltage (part 2/2) figure 14. source-drain diode forward characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 id (a) 0 1 2 3 4 5 6 7 8 9 10 11 gfs (s) vds=13v tj=25oc tj=150oc tj=-40oc 3 3.5 4 4.5 5 5.5 6 6.5 vin(v) 0 25 50 75 100 125 150 175 200 225 250 275 300 rds(on) (mohms) id=3.5a id=1a id=3.5a id=1a id=3.5a id=1a tj=25oc tj=150oc tj=-40oc 33.544.555.566.5 vin(v) 0 25 50 75 100 125 150 175 200 225 250 rds(on) (mohms) id=1.5a tj=150oc tj=-40oc tj=25oc 0123456789101112 id (a) 600 650 700 750 800 850 900 950 1000 1050 1100 vsd (mv) vin=0v
vnn3nv04p-e, VNS3NV04P-E protection features doc id 15626 rev. 5 13/22 figure 15. static drain source on resistance figure 16. turn-on current slope (part 1/2) figure 17. turn-on current slope (part 2/2) figure 18. transfer characteristics figure 19. static drain-source on resistance vs id figure 20. input voltage vs input charge 0 0.05 0.1 0.15 0.2 0.25 0.3 id(a) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 rds(on) (ohms) tj=25oc tj=150oc tj=-40oc vin=2.5v 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 rg(ohm) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 di/dt(a/us) vin=5v vdd=15v id=1.5a 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 rg(ohm) 0 0.25 0.5 0.75 1 1.25 1.5 1.75 di/dt(a/usec) vin=3.5v vdd=15v id=1.5a 1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 vin(v) 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 idon(a) vds=13.5v tj=150oc tj=25oc tj=-40oc 0 0.5 1 1.5 2 2.5 3 3.5 4 id (a) 0 25 50 75 100 125 150 175 200 225 250 rds(on) (mohms) tj=25oc tj=150oc tj= - 40oc vin=5v 0123456 qg (nc) 0 1 2 3 4 5 6 vin (v) vds=12v id=0.5a
protection features vnn3nv04p-e, VNS3NV04P-E 14/22 doc id 15626 rev. 5 figure 21. turn-off drain source voltage slope (part 1/2) figure 22. turn-off drain source voltage slope (part 2/2) figure 23. capacitance variations figure 24. output characteristics figure 25. normalized on resistance vs temperature figure 26. switching time resistive load (part 1/2) v 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 rg(ohm) 0 25 50 75 100 125 150 175 200 225 250 275 300 dv/dt(v/usec) vin=5v vdd=15v id=1.5a 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 rg(ohm) 0 25 50 75 100 125 150 175 200 225 250 275 300 dv/dt(v/usec) vin=3.5v vdd=15v id=1.5a 0 5 10 15 20 25 30 35 vds(v) 50 100 150 200 250 300 350 c(pf) f=1mhz vin=0v 012345678910 vds (v) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 id (a) vin=4v vin=5v vin=3v -50 -25 0 25 50 75 100 125 150 175 tc )oc) 0.5 1 1.5 2 2.5 3 3.5 4 rds(on) (mohm) vin=5v id=1.5a 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 rg(ohm) 0 0.5 1 1.5 2 2.5 3 3.5 4 t(usec) vdd=15v id=1.5a vin=5v td(off) tr td(on) tf
vnn3nv04p-e, VNS3NV04P-E protection features doc id 15626 rev. 5 15/22 figure 27. switching time resistive load (part 2/2) figure 28. normalized input threshold voltage vs temperature figure 29. normalized current limit vs junction temperature figure 30. step response current limit 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 vin(v) 0 100 200 300 400 500 600 700 800 900 t(nsec) vdd=15v id=1.5a rg=220ohm tf tr td(off) td(on) -50 -25 0 25 50 75 100 125 150 175 tc (oc) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 vinth (v) vds=vin id=1ma -50 -25 0 25 50 75 100 125 150 175 tc ( o c ) 0 1 2 3 4 5 6 7 8 9 10 ilim (a) vin=5v vds=13v 5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 32.5 vdd(v) 7.5 8 8.5 9 9.5 10 10.5 11 11.5 12 12.5 13 tdlim(usec) vin=5v rg=220ohm
package and packing information vnn3nv04p-e, VNS3NV04P-E 16/22 doc id 15626 rev. 5 4 package and packing information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 sot-223 mechanical data figure 31. sot-223 package dimensions table 5. sot-223 mechanical data symbol millimeters min. typ. max. a 1.8 b0.60.70.85 b1 2.9 3 3.15 c 0.24 0.26 0.35 d 6.3 6.5 6.7 e2.3 e1 4.6 e 3.3 3.5 3.7 h6.777.3 v 10 (max) a1 0.02 0.1 0046067
vnn3nv04p-e, VNS3NV04P-E package and packing information doc id 15626 rev. 5 17/22 4.2 so-8 mechanical data table 6. so-8 mechanical data symbol millimeters min typ max a 1.75 a1 0.1 0.25 a2 1.65 a3 0.65 0.85 b0.35 0.48 a 1.75 a1 0.10 0.25 a2 1.25 b 0.28 0.48 c 0.17 0.23 d (1) 1. dimension ?d? does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.15 mm in total (both side). 4.80 4.90 5.00 e 5.80 6.00 6.20 e1 (2) 2. dimension ?e1? does not include in terlead flash or protrusions. interl ead flash or protrusions shall not exceed 0.25 mm per side. 3.80 3.90 4.00 e 1.27 h 0.25 0.50 l 0.40 1.27 l1 1.04 k 0 8 ccc 0.10
package and packing information vnn3nv04p-e, VNS3NV04P-E 18/22 doc id 15626 rev. 5 figure 32. so-8 package dimensions 0016023 d
vnn3nv04p-e, VNS3NV04P-E package and packing information doc id 15626 rev. 5 19/22 4.3 sot-223 packing information figure 33. sot-223 tape and reel shipment (suffix ?tr?) reel dimensions base q.ty 1000 bulk q.ty 1000 a (max) 330 b (min) 1.5 c ( 0.2) 13 f 20.2 g (+ 2 / -0) 12.4 n (min) 60 t (max) 18.4 tape dimensions according to electronic industries association (eia) standard 481 rev. a, feb. 1986 all dimensions are in mm. tape width w 12 tape hole spacing p0 ( 0.1) 4 component spacing p 8 hole diameter d ( 0.1/-0) 1.5 hole diameter d1 (min) 1.5 hole position f ( 0.05) 5.5 compartment depth k (max) 4.5 hole spacing p1 ( 0.1) 2 top cover tape end start no components no components components 500mm min 500mm min empty components pockets saled with cover tape. user direction of feed
package and packing information vnn3nv04p-e, VNS3NV04P-E 20/22 doc id 15626 rev. 5 4.4 so-8 packing information figure 34. so-8 tube shipment (no suffix) figure 35. so-8 tape and reel shipment (suffix ?tr?) all dimensions are in mm. base q.ty 100 bulk q.ty 2000 tube length ( 0.5) 532 a 3.2 b 6 c ( 0.1) 0.6 c b a tape dimensions according to electronic industries association (eia) standard 481 rev. a, feb 1986 all dimensions are in mm. tape width w 12 tape hole spacing p0 ( 0.1) 4 component spacing p 8 hole diameter d ( 0.1/-0) 1.5 hole diameter d1 (min) 1.5 hole position f ( 0.05) 5.5 compartment depth k (max) 4.5 hole spacing p1 ( 0.1) 2 top cover tape end start no components no components components 500mm min 500mm min empty components pockets saled with cover tape. user direction of feed reel dimensions all dimensions are in mm. base q.ty 2500 bulk q.ty 2500 a (max) 330 b (min) 1.5 c ( 0.2) 13 f 20.2 g (+ 2 / -0) 12.4 n (min) 60 t (max) 18.4
vnn3nv04p-e, VNS3NV04P-E revision history doc id 15626 rev. 5 21/22 5 revision history table 7. document revision history date revision changes 24-may-2009 1 initial release. 21-jul-2009 2 updated table 1: device summary . 29-sep_2009 3 removed target specification on cover page. 10-may-2012 4 updated table 1: device summary table 2: absolute maximum ratings : ?r in min : changed unit to (it was w) 18-sep-2013 5 updated disclaimer.
vnn3nv04p-e, VNS3NV04P-E 22/22 doc id 15626 rev. 5 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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